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The 10nm-class LPDDR5 DRAM will be available in two bandwidths: 6400Mb/s at 1.1 operating voltage (V) and 5500Mb/s at 1.05V.
Samsung has not yet announced when it will bring its LPDDR5 chip to volume production, nor its 16Gb full-power DDR5 equivalent. Samsung claims that it was able to achieve this level of performance thanks to several architectural enhancements. The 8Gb LPDDR5 chips also take advantage of a highly optimized circuit architecture to guarantee that the chip is performing up to its ultra-high-speed specification. "We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape", Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics, said in a statement. It has been configured to avoid overwriting cells with "0" values.
Power consumption has been reduced with Samsung's new LPDRR5 tech, with a new "deep sleep mode" that slices the power consumption to half of what current LPDDR4X offers in "idle mode", which is impressive. Samsung mentioned that its new DRAM is aimed towards "5G and AI-powered mobile applications".
Testing and validation of the 8Gb chip has already been completed in an 8GB package, although the council in charge of releasing the DDR5 standard, JEDEC, hasn't actually finalised the plans for the memory tech as of yet. Nearly all high-end phones, mobile devices, and even portable PCs these days use LPDDR4X or even just LPDDR4.
These power saving attempts will supposedly decrease power consumption by up to 30 percent, and in the long run, help increase the the battery life of future smartphones.